Semiconductor light emitting device and method for manufacturing the same

ABSTRACT

A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of application Ser. No.12/980,964, filed 29 Dec. 2010.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor light emitting device and amethod for manufacturing the same, more particular to a semiconductorlight emitting device with a lateral structure.

2. Description of the Related Art

Referring to FIG. 1, a conventional process for manufacturing asemiconductor light emitting chip 1 with a lateral structure comprises:(a) epitaxially growing an epitaxial layer unit 12 on an epitaxialsubstrate 11, the epitaxial layer unit 12 being made from a GaN seriessemiconductor material and including a n-type cladding layer 121 that isin contact with the epitaxial substrate 11, a p-type cladding layer 122,and an active layer 123 disposed between the n-type and p-type claddinglayers 121, 122; (b) etching the epitaxial layer unit 12 so as to exposepartially the n-type cladding layer 121 and to define a plurality ofepitaxial regions 15; (c) forming a first electrode 13 disposed on andin ohmic contact with the exposed n-type cladding layer 121 in each ofthe epitaxial regions 15, and a second electrode 14 disposed on and inohmic contact with the p-type cladding layer 122 in each of theepitaxial regions 15; and (d) cutting the epitaxial layer unit 12 andthe epitaxial substrate 11 to obtain a plurality of semiconductor lightemitting chips 1. The structure of the semiconductor light emitting chip1 is shown in FIG. 2.

The epitaxial substrate 11 is made from a material on which the GaNseries semiconductor material of the epitaxial layer unit 12 is easilygrown. An example of the material of the epitaxial substrate 11 issapphire.

In addition, a transparent conductive layer (not shown), e.g., an indiumtin oxide (ITO) layer, may be formed between the second electrode 14 andthe p-type cladding layer 122 to improve electric conduction of the chip1.

When an external voltage is applied to the semiconductor light emittingchip 1, an electric current is generated and flows from the secondelectrode 14 toward the epitaxial layer unit 12 where the chargecarriers, i.e., electrons and holes, are allowed to flow and spreadlaterally. According to the electroluminescence effect, the electronsare able to recombine with the holes within the active layer 123 of theepitaxial layer unit 12 and emit energy in the form of photons.Therefore, the semiconductor chip 1 is able to emit light from theepitaxial layer unit 12.

The aforesaid manufacturing process of the semiconductor light emittingchip 1 with a lateral structure is relatively simple. However, theepitaxial substrate 11 of the chip 1 has a low thermal conductivity thatresults in thermal accumulation during operation, thereby reducing theservice life of the chip 1.

FIGS. 3 and 4 show a semiconductor light emitting chip 2 with a verticalstructure and the manufacturing process thereof. As shown in FIG. 4,after epitaxially growing an epitaxial layer unit 22, which has a n-typecladding layer 221, a p-type cladding layer 222, and an active layer223, on an epitaxial substrate 21, a permanent substrate 23 is bonded tothe epitaxial layer unit 22 oppositely of the epitaxial substrate 21,and the epitaxial substrate 21 is removed. The permanent substrate 23has a high thermal conductivity and is able to serve as an electrode.Another electrode 24 is subsequently formed on and in ohmic contact withthe epitaxial layer 22 oppositely of the permanent substrate 23 at anelevated temperature. A semiconductor light emitting chip 2 with avertical structure (as shown in FIG. 3) is obtained by cutting theepitaxial layer unit 22 and the permanent substrate 23.

The drawback, i.e., the thermal accumulation, associated with the chip 1with the lateral structure can be overcome by the chip 2 with thevertical structure by virtue of replacement of the epitaxial substrate21 having poor thermal dissipation with the permanent substrate 23 witha high thermal conductivity.

However, formation of the electrode 24 on the epitaxial layer 22 underan elevated temperature is conducted after adhesion of the permanentsubstrate 23 to the epitaxial layer unit 22. The high temperatureprocess may cause deformation or deterioration of the permanentsubstrate 23 and an adhesive between the epitaxial layer 22 and thepermanent substrate 23. Therefore, problems such as warping and electricleakage of the semiconductor light emitting chip 2 may occur.

Moreover, in the chips 1 and 2, the electrodes 14, 24 disposed above theepitaxial layer units 12, 22 may shade the light illuminated from theactive layers 123, 223 of the epitaxial layer units 12, 22 and reducethe luminance efficiency of the chips 1 and 2. In addition, in theconventional methods, the chips 1 and 2 are generally packagedindividually. A subsequent series or parallel connection of the chips 1or 2 results in a relatively large size of a light emitting product madefrom the chips 1, 2 and a complicated design for the circuit.

SUMMARY OF THE INVENTION

Therefore, one object of the present invention is to provide asemiconductor light emitting device and a method for manufacturing thesame, that can overcome the aforesaid drawbacks of the prior art.

According to a first aspect of the present invention, a method formanufacturing a semiconductor light emitting device comprises: (a)providing a temporary substrate; (b) forming a multi-layered LEDepitaxial structure, having at least one light emitting unit, on thetemporary substrate, wherein a first surface of the light emitting unitcontacts the temporary substrate, and the light emitting unit comprisesa n-type layer, an active region, and a p-type layer; (c) forming an-electrode on the n-type layer; (d) forming a p-electrode on the p-typelayer; (e) bonding a permanent substrate on the light emitting unit, then-electrode and the p-electrode; (f) removing the temporary substrate toexpose the light emitting unit; and (g) etching the exposed lightemitting unit, to expose at least one of the n-electrode and thep-electrode. The etching process may expose the whole electrode or aportion of the electrode.

According to a second aspect of the present invention, a semiconductorlight emitting device comprises: a permanent substrate; a multi-layeredLED epitaxial structure formed on the permanent substrate and having atleast one light emitting unit that comprises a n-type layer, an activeregion, and a p-type layer; a n-electrode coupled to the n-type layerand disposed between the permanent substrate and the light emittingunit; a p-electrode coupled to the p-type layer and disposed between thepermanent substrate and the light emitting unit; and at least oneopening formed in the light emitting unit to expose at least one of then-electrode and the p-electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features and advantages of the present invention will becomeapparent in the following detailed description of the preferredembodiments of the invention, with reference to the accompanyingdrawings, in which:

FIG. 1 shows successive steps of a conventional method for manufacturinga semiconductor light emitting chip with a lateral structure;

FIG. 2 is a schematic view of a conventional semiconductor lightemitting chip made by the method of FIG. 1;

FIG. 3 is a schematic view of a conventional semiconductor lightemitting chip with a vertical structure;

FIG. 4 shows successive steps of a conventional method for manufacturingthe semiconductor light emitting device of FIG. 3;

FIG. 5 to FIG. 8 show successive steps of the first preferred embodimentof a method for manufacturing a semiconductor light emitting deviceaccording to the present invention;

FIG. 9 is a schematic view illustrating a semiconductor light emittingdevice made by the first preferred embodiment of the method of thisinvention;

FIG. 10 shows an electrical connection step of the second embodiment ofa method for manufacturing a semiconductor light emitting deviceaccording to the present invention;

FIG. 11 shows a semiconductor light emitting device which is amodification of the semiconductor light emitting device shown in FIG.10; and

FIG. 12 shows an electrical connection step of the third embodiment of amethod for manufacturing a semiconductor light emitting device accordingto the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Before the present invention is described in greater detail withreference to the accompanying preferred embodiments, it should be notedherein that like elements are denoted by the same reference numeralsthroughout the disclosure.

Referring to FIGS. 5 to 8, the first preferred embodiment of a methodfor manufacturing a semiconductor light emitting device 6 according tothe present invention comprises the steps described below.

As shown in FIG. 5, a multi-layered LED epitaxial structure 62 is formedon a temporary substrate 71. The multi-layered LED epitaxial structure62 has a plurality of light emitting units 65, each of which has a firstsurface 624 contacting the temporary substrate 71. Each of the lightemitting units 65 comprises a n-type layer 621 composed of a n-typesemiconductor material, a p-type layer 622 composed of a p-typesemiconductor material, and an active region 623 disposed between then-type and p-type layers 621, 622. In this embodiment, the multi-layeredLED epitaxial structure 62 is made of a GaN series semiconductormaterial, and the temporary substrate 71 is made of sapphire so as toallow the epitaxial growth of a GaN series semiconductor materialthereon. The light emitting units 65 are etched so as to exposepartially the n-type layers 621. In one example, the n-type layer 621has the first surface 624 to contact the temporary substrate 71.

In another example, the light emitting units 65 may further comprise acontacting layer, disposed between the n-type layer 621 and thetemporary substrate 71, comprising one or any combination selected fromthe group consisting of an undoped layer, a buffer layer, and a superlattice layer. The contacting layer may have the first surface 624 tocontact the temporary substrate 71.

As shown in FIG. 6, in each of the light emitting units 65, an-electrode 63 is formed on and coupled to the n-type layer 621, and ap-electrode 64 is formed on and coupled to the p-type layer 622.

After forming the n-electrodes 63 and the p-electrodes 64, as shown inFIG. 7A, a permanent substrate 61 having a high thermal conductivity isbonded on the light emitting units 65, the n-electrodes 63 and thep-electrodes 64 oppositely of the temporary substrate 71 such that then-electrodes 63 and the p-electrodes 64 are disposed between thepermanent substrate 61 and the light emitting units 65 of themulti-layered LED epitaxial structure 62. The temporary substrate 71 isremoved so as to expose the first surfaces 624 of the light emittingunits 65.

In this embodiment, the p-type layers 622 of the light emitting units 65are bonded to the permanent substrate 61. However, other layer elementssuch as an ITO layer, an oxide layer, an adhesive layer or combinationsthereof, may be included in the light emitting units 65 and contact thepermanent substrate 61.

In this embodiment, the permanent substrate 61 is adhered to then-electrodes 63, the p-electrodes 64 and the light emitting units 65using an adhesive 66. Preferably, the adhesive 66 is an opticaladhesive. Alternatively, metal bonding, eutectic bonding, etc., can beused to bond the permanent substrate 61 to the n-electrodes 63 and thep-electrodes 64.

Preferably, the permanent substrate 61 comprises a base 611 made of amaterial having a high thermal conductivity, and a reflecting layer 612that is disposed between the base 611 and the adhesive 66 and that isused to reflect the light emitted from the active regions 623 toward then-type layers 621.

After removing the temporary substrate 71, the exposed light emittingunits 65 are etched so as to expose at least one of the n-electrode 63and the p-electrode 64 of each of the light emitting units 65. Theetching process may expose the whole electrode or a portion of theelectrode. In the first preferred embodiment, as shown in FIG. 8, thelight emitting units 65 are partially etched from the first surfaces 624so as to expose the n-electrodes 63 and the p-electrodes 64.

The multi-layered LED epitaxial structure 62 and the permanent substrate61 are subsequently cut to obtain a plurality of individualsemiconductor light emitting devices 6.

It should be noted that, during removal of the temporary substrate 71,the first surface 624 of each of the light emitting units 65 may beroughened at the same time, so as to form a first roughened surface 6241exhibiting relatively low roughness (as shown in FIG. 7B).Alternatively, a roughening step can be conducted to roughen the firstsurfaces 624 of the light emitting units 65 after the temporarysubstrate 71 is removed, so as to form a second roughened surface 6243exhibiting relatively high roughness (as shown in FIG. 7C). The roughingstep may be performed before the etching step or after the etching step.By roughening the first surfaces 624 of the light emitting units 65,superior light extraction efficiency can be achieved for thesemiconductor light emitting device 6.

Referring to FIG. 9, a semiconductor light emitting device 6 made by theaforesaid first embodiment of the method according to the presentinvention comprises: a permanent substrate 61 having a base 611 and areflecting layer 612; a multi-layered LED epitaxial structure 62 on topof the permanent substrate 61 and having a light emitting unit 65 thatcomprises a n-type layer 621, an active region 623, and a p-type layer622; a n-electrode 63 coupled to the n-type layer 621 and disposedbetween the permanent substrate 61 and the light emitting unit 65; ap-electrode 64 coupled to the p-type layer 622 and disposed between thepermanent substrate 61 and the light emitting unit 65; two openings 67formed in the light emitting unit 65 to expose the n-electrode 63 andthe p-electrode 64; and an adhesive 66 used to adhere the light emittingunit 65, the n-electrode 63 and the p-electrode 64 to the permanentsubstrate 61.

Particularly, the openings 67 are formed away from the permanentsubstrate 61 by removing partial portions of the light emitting unit 65.

When an external voltage is applied to the semiconductor light emittingdevice 6 through the n-electrode 63 and the p-electrode 64, theelectrons in the light emitting unit 65 release energy in the form ofphotons resulted from electroluminescence effect, and therefore thesemiconductor light emitting device 6 is able to emit light in alldirections. During operation, the internal heat generated by thesemiconductor device 6 may be dissipated through the base 611, which hasa high thermal conductivity, of the permanent substrate 61.

The light from the light emitting unit 65 passes through the n-typelayer 621 and is emitted outwardly from the semiconductor light emittingdevice 6. The second roughened surface 6243 of the n-type layer 621permits more light to penetrate therethrough. Moreover, since thep-electrode 64 is disposed under the light emitting unit 65 and there isno electrode disposed in the light extracting path, the luminanceefficiency of the semiconductor device 6 is improved. In addition, thelight emitted from the light emitting unit 65 toward the permanentsubstrate 61 is reflected by the reflecting layer 612 of the permanentsubstrate 61, thereby improving light extraction efficiency of thesemiconductor device 6.

The second embodiment of the method for manufacturing a semiconductorlight emitting device 6 of the present invention has steps the same asthose of the first embodiment, except that the second embodiment furthercomprises the step of forming a plurality of conductive films 88 overthe n-electrodes and the p-electrodes of the light emitting units 65.The permanent substrate 61 in the second embodiment further comprises aninsulating layer 613 that is disposed on the reflecting layer 612opposite to the base 611, and that is adhered to the n-electrodes 63 andthe p-electrodes 64 of the light emitting units 65 to electricallyisolate the n-electrodes 63 from the p-electrodes 64 of the lightemitting units 65 (see FIG. 10).

To be specific, after the light emitting units 65 are partially removedto expose the n-electrodes 63 and the p-electrodes 64, the secondembodiment of the method according to the present invention furthercomprises a step of forming a plurality of conductive films 88 over then-electrodes 63 and the p-electrodes 64 of the light emitting units 65,as shown in FIG. 10. Each of the conductive films 88 electricallyconnects the n-electrode 63 formed on one of the light emitting units 65to the p-electrode 64 formed on an adjacent one of the light emittingunits 65, i.e., the light emitting units 65 are series connected to eachother by the conductive films 88.

Preferably, before forming the conductive films 88, an insulating wall89 is formed on a predetermined area of the multi-layered LED epitaxialstructure 62, which is disposed between the n-electrode 63 formed on oneof the light emitting units 65 and the p-electrode 64 formed on anadjacent one of the light emitting units 65. The respective conductivefilm 88 is to be formed on the respective insulating wall 89. Theinsulating walls 89 are formed to isolate the respective light emittingunits 65 and the conductive films 88.

After forming the conductive films 88, the multi-layered LED epitaxialstructure 62 and the permanent substrate 61 are cut to obtain aplurality of semiconductor light emitting devices 6 each including adesired number of the light emitting units 65.

The semiconductor light emitting device 6 made by the second embodimentis shown to include: a permanent substrate 61; a multi-layered LEDepitaxial structure 62 formed on the permanent substrate 61 and having aplurality of light emitting units 65; a plurality of n-electrodes 63each of which is coupled to the n-type layer 621 of the respective lightemitting unit 65 and is disposed between the permanent substrate 61 andthe respective light emitting unit 65; a plurality of p-electrodes 64each of which is coupled to the p-type layer 622 of the respective lightemitting units 65 and is disposed between the permanent substrate 61 andthe respective light emitting units 65; a plurality of openings 68formed in the light emitting units 65 to partially expose then-electrodes 63 and the p-electrodes 64 of the light emitting units 65;a plurality of conductive films 88 disposed over the n-electrodes 63 andthe p-electrodes 64, each of the conductive films 88 electricallyconnecting the n-electrode 63 formed on one of the light emitting units65 to the p-electrode 64 in an adjacent one of the light emitting units65; and a plurality of insulating walls 89 disposed between theconductive films 88 and the light emitting units 65.

In this embodiment, the permanent substrate 61 has a base 611, areflecting layer 612 disposed on the base 611, and an insulating layer613 disposed on the reflecting layer 612 and adhered to the n-electrodes63 and the p-electrodes 64 of the light emitting units 65 using anadhesive 66 so as to electrically isolate the n-electrodes 63 from thep-electrodes 64.

By forming the conductive films 88 before packaging, the volume of thesemiconductor light emitting device 6 made according to the secondembodiment can be reduced.

FIG. 11 shows a modification of the semiconductor light emitting device6 shown in FIG. 10. In this modification, the permanent substrate 61further comprises a circuit layer 614 that is disposed on the reflectinglayer 612 opposite to the base 611 and that is adhered to andelectrically interconnects the n-electrodes 63 of the light emittingunits 65. The insulating layer 613 is disposed between the circuit layer614 and the p-electrodes 64 to electrically isolate the n-electrodes 63from the p-electrodes 64. The adhesive 66 used for adhering the lightemitting units 65 to the n-electrodes 63 and the p-electrodes 64 is notshown.

Preferably, the circuit layer 614 is made of a transparent conductivematerial, and has a predetermined patterned electric circuit thereon.

FIG. 12 shows the third embodiment of the method for manufacturing asemiconductor light emitting device 6 of the present invention. Thethird embodiment differs from the second embodiment in that, theopenings 68 are formed in the light emitting units 65 to merely exposethe n-electrodes 63, i.e., the p-electrodes 64 are not exposed.

Moreover, in this embodiment, the conductive films are formed over theexposed n-electrodes 63 to electrically connect the n-electrode 63formed on one of the light emitting units 65 to the n-electrode 63formed on an adjacent one of the light emitting units 65, i.e., then-electrodes 63 of each of the light emitting units 65 are parallelconnected. The insulating walls 89 are formed between the conductivefilms 88 and the light emitting units 65. In addition, the permanentsubstrate 61 has a base 611, a reflecting layer 612 on the base 611, acircuit layer 614 that is disposed on the reflecting layer 612 oppositeto the base 611 and that is adhered to and electrically interconnectsthe n-electrodes 63, and an insulating layer 613 disposed between thecircuit layer 614 and the p-electrodes 64 of the light emitting units 65to electrically isolate the n-electrodes 63 from the p-electrodes 64.

In conclusion, the methods for manufacturing a semiconductor lightemitting device 6 with a lateral structure are respectively conducted bybonding a permanent substrate 61 to the multi-layered LED epitaxialstructure 62 after forming the n-electrode 63 and the p-electrode 64,thereby eliminating the problems of warping and electric leakage causedby the deformation or deterioration of a substrate and an adhesive of aconventional light emitting chip attributed to the high temperatureduring forming the electrodes thereof. During operation, the internalheat generated by the device 6 can be dissipated through the base 611 ofthe permanent substrate 61, thereby resulting in improvement in thestability and the service life of the device 6.

Moreover, the second roughened surface 6243 of the semiconductor device6 increases the penetration rate of the light emitted from the lightemitting unit 65 and thus improves the light extraction and luminanceefficiency of the semiconductor light emitting device 6.

In the second and third embodiments, the semiconductor light emittingdevices 6 thus manufactured can be electrically connected to each otherbefore packaging. The size of a light emitting product made from thelight emitting devices 6 may be reduced accordingly.

While the present invention has been described in connection with whatare considered the most practical and preferred embodiments, it isunderstood that this invention is not limited to the disclosedembodiments but is intended to cover various arrangements includedwithin the spirit and scope of the broadest interpretations andequivalent arrangements.

What is claimed is:
 1. A method for manufacturing a semiconductor lightemitting device, comprising the following steps: (a) providing atemporary substrate; (b) forming a multi-layered LED epitaxialstructure, having at least one light emitting unit, on the temporarysubstrate, wherein a first surface of the at least one light emittingunit contacts the temporary substrate, and the at least one lightemitting unit comprises a n-type layer, an active region, and a p-typelayer; (c) forming a n-electrode on the n-type layer; (d) forming ap-electrode on the p-type layer; (e) bonding a permanent substrate onthe at least one light emitting unit, the n-electrode and thep-electrode; (f) removing the temporary substrate to expose the at leastone light emitting unit; and (g) etching the exposed, at least one lightemitting unit, to expose at least one of the n-electrode and thep-electrode.
 2. The method of claim 1, wherein the n-type layer has thefirst surface to contact the temporary substrate.
 3. The method of claim1, wherein the at least one light emitting unit further comprises acontacting layer, disposed between the n-type layer and the temporarysubstrate, comprising one or any combination selected from the groupconsisting of an undoped layer, a buffer layer, and a super latticelayer.
 4. The method of claim 3, wherein the contacting layer has thefirst surface to contact the temporary substrate.
 5. The method of claim1, wherein said step of removing the temporary substrate is to exposethe first surface of the at least one light emitting unit, and said stepof etching the at least one light emitting unit is from the firstsurface.
 6. The method of claim 1, wherein said step of removing thetemporary substrate also comprises roughening the at least one lightemitting unit, so as to expose a roughened light emitting unit, beforethe following etching step.
 7. The method of claim 1, after said step ofremoving the temporary substrate, further comprising a roughening stepto roughen the at least one light emitting unit, so as to form aroughened light emitting unit, before the following etching step.
 8. Themethod of claim 1, wherein the permanent substrate is bonded on the atleast one light emitting unit, the n-electrode and the p-electrode usingan adhesive bonding, metallic bonding, or eutectic bonding technique. 9.The method of claim 8, wherein the permanent substrate comprises a baseand a reflecting layer.
 10. The method of claim 8, wherein themulti-layered LED epitaxial structure comprises a plurality of lightemitting units.
 11. The method of claim 10, wherein the permanentsubstrate comprises a base, a reflecting layer, and an insulating layerdisposed on the reflecting layer opposite to the base and adhered ton-electrodes and p-electrodes of the light emitting units toelectrically isolate the n-electrodes from the p-electrodes.
 12. Themethod of claim 11, further comprising forming a plurality of conductivefilms over the n-electrodes and the p-electrodes of the light emittingunits after step (g), each of the conductive films electricallyconnecting the n-electrode formed on one of the light emitting units tothe p-electrode formed on an adjacent one of the light emitting units.13. The method of claim 10, wherein the permanent substrate comprises abase, a reflecting layer disposed on the base, a circuit layer that isdisposed on the reflecting layer opposite to the base and that isadhered to and electrically interconnects n-electrodes of the lightemitting units, and an insulating layer disposed between the circuitlayer and p-electrodes of the light emitting units to electricallyisolate the n-electrodes from the p-electrodes of the light emittingunits.
 14. The method of claim 13, further comprising forming aplurality of conductive films over the n-electrodes and the p-electrodesafter step (g), each of the conductive films electrically connecting then-electrode formed on one of the light emitting units to the p-electrodeformed on an adjacent one of the light emitting units.